Electrical properties of Si1-x-yGexCy and Ge1-yCy alloys

Journal of Electronic Materials

Volumn 26, Issue 12, 1997, Pages 1371-1375

  Chen, F ^a   Troger R T ^a   Roe, K ^a   Dashell, M D ^a   Jonczyk, R ^a   Holmes, D S ^b   Wilson, R G ^c   Kolodzey, J ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b Lake Shore Cryotronics Inc   (United States)

^c Hughes Aircraft Co   (United States)

Author keywords

Carbon; Electrical properties; Ge1 yCy germanium; Group IV alloys; Hall mobility; I V characteristics; Molecular beam epitaxy (MBE); Si1 x y GexCy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON; CHARGE TRANSFER; COMPOSITION EFFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; GERMANIUM ALLOYS; HALL EFFECT; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; X RAY DIFFRACTION;

FORWARD TURN ON VOLTAGE; HALL MOBILITY; REVERSE LEAKAGE CURRENT;

SILICON ALLOYS;

EID: 0031387191     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0053-4     Document Type: Article

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