Future evolution of dram and its materials

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 113-126

  Lee, Dai Hoon ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Capacitor; Cost effectiveness; DRAM(s); Lithography; Metallization; MML(Merged Memory Logic); Scale down

Indexed keywords

CAPACITORS; COST EFFECTIVENESS; ELECTRON BEAM LITHOGRAPHY; FERROELECTRIC DEVICES; METALLIZING;

MERGED MEMORY LOGIC;

RANDOM ACCESS STORAGE;

EID: 0031372055     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012987     Document Type: Article

References (3)

1. K.Yano, et al., "A Single-Electron-Memory Integrated Circuit for Giga-to-Tera Bit Storage," in Technical Digest of International Solid-State Circuits Conference, 1996, pp266-267.
2. S. Maeda, et al., "A Vertical φ-Shape Transistor(VφT) Cell for IGbit DRAM and Beyond," Technical Digest of Symposium on VLSI Technology, 1994, pp133-134.
3. T.Hanyu, et al., "One-Transistor-Cell Multi-Valued CAM for a Collision Detection VLSI Processor," Technical Digest of International Solid-State Circuit Conference, 1996, pp264-265.