Recent progress in InGaAsSb/GaSb TPV devices

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 1996, Pages 81-84

  Shellenbarger, Z A ^a   Mauk, M G ^a   DiNetta, L C ^a   Charache, G W ^a  

^a GE ENERGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CURRENT DENSITY; ENERGY GAP; LIGHT ABSORPTION; LIQUID PHASE EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

INTERNAL QUANTUM EFFICIENCY; LATTICE MATCHING; OPEN CIRCUIT VOLTAGE; OPTICAL ABSORPTION EDGE; QUATERNARY ALLOYS; THERMOPHOTOVOLTAIC DEVICES;

PHOTOVOLTAIC CELLS;

EID: 0030415895     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/pvsc.1996.563951     Document Type: Conference Paper

References (8)