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Volumn 258-263, Issue 9993, 1997, Pages 1419-1424

Vacancy-type defects in electron and proton irradiated II-VI compounds

Author keywords

Electron and proton irradiation; II VI compounds; Point defects; Positron annihilation

Indexed keywords

ANNEALING; ARGON; DOPPLER EFFECT; ELECTRONS; ENERGY GAP; POINT DEFECTS; PROTECTIVE ATMOSPHERES; PROTONS; SPECTROSCOPIC ANALYSIS; ZINC OXIDE;

EID: 0031361758     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1419     Document Type: Article
Times cited : (6)

References (24)
  • 16
    • 12844283569 scopus 로고
    • ed. K. Sumino (North-Holland:Elsevier Science Publishers B.V.)
    • S. Dannefaer in "Defect Control in Semiconductors" ed. K. Sumino (North-Holland:Elsevier Science Publishers B.V.) pp. 1571 (1990).
    • (1990) Defect Control in Semiconductors , pp. 1571
    • Dannefaer, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.