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Volumn , Issue 4, 1997, Pages 17-30

High-temperature electronics applications of SOI CMOS technology

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HIGH TEMPERATURE APPLICATIONS; NETWORKS (CIRCUITS); SUBSTRATES;

EID: 0031361552     PISSN: 00353248     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (38)
  • 2
    • 6244253579 scopus 로고    scopus 로고
    • Semiconductors for high temperature electronics
    • (Ed. AEA Technology), July
    • HITEN Network, "Semiconductors for high temperature electronics", HITEN News Int. (Ed. AEA Technology), vol. 2, no 4, pp. 2-3, July 1997. (see also http://www.hiten.com)
    • (1997) HITEN News Int. , vol.2 , Issue.4 , pp. 2-3
  • 4
    • 84872515405 scopus 로고    scopus 로고
    • A new family of oil well electronics based on HTASIC
    • (Albuquerque, USA), June
    • Fallet T. et al, "A new family of oil well electronics based on HTASIC", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. P.3-8, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Fallet, T.1
  • 5
    • 0004499782 scopus 로고    scopus 로고
    • SOI devices for high temperature applications
    • (Albuquerque, USA), June
    • Brusius P. et al, "SOI devices for high temperature applications", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. XI.3-8, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Brusius, P.1
  • 6
    • 0021290968 scopus 로고
    • Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures - Part I: Theory
    • Shoucair F.S., Hwang W. and Jain P., "Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures - Part I: Theory", Microelectron. Reliab., vol. 24, no 3, pp. 465-485, 1984.
    • (1984) Microelectron. Reliab. , vol.24 , Issue.3 , pp. 465-485
    • Shoucair, F.S.1    Hwang, W.2    Jain, P.3
  • 7
    • 0021295048 scopus 로고
    • Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures - Part II: Experiment
    • Shoucair F.S., Hwang W. and Jain P., "Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures - Part II: Experiment", Microelectron. Reliab., vol. 24, no 3, pp. 487-510, 1984.
    • (1984) Microelectron. Reliab. , vol.24 , Issue.3 , pp. 487-510
    • Shoucair, F.S.1    Hwang, W.2    Jain, P.3
  • 8
    • 0025475660 scopus 로고
    • Temperature dependence of threshold voltage in thin-film SOI MOSFETs
    • Aug.
    • Groesenecken G. et al, "Temperature dependence of threshold voltage in thin-film SOI MOSFETs", IEEE Electron Device Lett., vol. 11, no8, pp. 329-331, Aug. 1990.
    • (1990) IEEE Electron Device Lett. , vol.11 , Issue.8 , pp. 329-331
    • Groesenecken, G.1
  • 9
    • 4243099500 scopus 로고
    • Temperature behaviour of CMOS devices built on SIMOX substrates
    • (Nottingham UK), Sept.
    • Belz J. et al, "Temperature behaviour of CMOS devices built on SIMOX substrates", Proc. 20th ESSDERC (Nottingham UK), pp. 449-452, Sept. 1990.
    • (1990) Proc. 20th ESSDERC , pp. 449-452
    • Belz, J.1
  • 10
    • 0027219869 scopus 로고
    • Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high temperature operation (150-300°C)
    • Flandre D. et al, "Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high temperature operation (150-300°C)", IEEE Electron Device Lett., vol. 14, no1, pp. 10-12, 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , Issue.1 , pp. 10-12
    • Flandre, D.1
  • 12
    • 85051932796 scopus 로고
    • SOI technology for high-temperature applications
    • (San Francisco, USA), Dec.
    • Francis P. et al, "SOI technology for high-temperature applications", Proc. IEDM (San Francisco, USA), pp. 353-356, Dec. 1992.
    • (1992) Proc. IEDM , pp. 353-356
    • Francis, P.1
  • 13
    • 0029185370 scopus 로고
    • Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits
    • Jan.
    • Flandre D., "Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits", Materials Science & Engineering - B, vol. 29, pp. 7-12, Jan. 1995.
    • (1995) Materials Science & Engineering - B , vol.29 , pp. 7-12
    • Flandre, D.1
  • 14
    • 6244283010 scopus 로고    scopus 로고
    • High temperature electronic devices and materials - A review
    • (Albuquerque, USA), June
    • Wurfl J., "High temperature electronic devices and materials - A review", Short Course 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), June 1996.
    • (1996) Short Course 3rd Int. High Temperature Electronics Conf.
    • Wurfl, J.1
  • 15
    • 6244243306 scopus 로고    scopus 로고
    • Comparison of GaAs JFETs to MESFETs for high-temperature operation
    • (Albuquerque, USA), June
    • Zolper J.C. et al, "Comparison of GaAs JFETs to MESFETs for high-temperature operation", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. IV.9-14, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Zolper, J.C.1
  • 16
    • 6244286908 scopus 로고
    • Low leakage GaAs MESFET devices operating at 350°C ambient temperature
    • (Charlotte, USA), June
    • Lee R. et al, "Low leakage GaAs MESFET devices operating at 350°C ambient temperature", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. V.3-8, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Lee, R.1
  • 17
    • 5544281537 scopus 로고
    • High temperature Silicon carbide MOSFETs with very low drain leakage current
    • (Charlotte, USA), June
    • Billon T. et al, "High temperature Silicon carbide MOSFETs with very low drain leakage current", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. X.29-34, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Billon, T.1
  • 18
    • 6244238844 scopus 로고
    • Device modeling for high temperature integrated circuits: Silicon (CMOS), Gallium arsenide (MESFETs) and Silicon carbide (MOSFETs)
    • (Charlotte, USA), June
    • Shoucair F.S., "Device modeling for high temperature integrated circuits: Silicon (CMOS), Gallium arsenide (MESFETs) and Silicon carbide (MOSFETs)", Short Course 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), June 1994.
    • (1994) Short Course 2nd Int. High Temperature Electronics Conf.
    • Shoucair, F.S.1
  • 19
    • 6244285944 scopus 로고
    • GaAs heterojunction devices for integrated circuit technology at elevated temperatures
    • (Charlotte, USA), June
    • Wilson C.D. and O'Neill A.G., "GaAs heterojunction devices for integrated circuit technology at elevated temperatures", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. V. 15-20, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Wilson, C.D.1    O'Neill, A.G.2
  • 20
    • 6244237198 scopus 로고
    • Standard CMOS ASIC-technology for application up to 25O0C
    • (Charlotte, USA), June
    • Eichner J. and Bott V., "Standard CMOS ASIC-technology for application up to 25O0C", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. VII.21-26, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Eichner, J.1    Bott, V.2
  • 21
    • 6244283933 scopus 로고    scopus 로고
    • Design and characterization of digital standard cells using junction isolated epi-CMOS for operation up to 250°C
    • (Albuquerque, USA), June
    • J. Stemmer et al, "Design and characterization of digital standard cells using junction isolated epi-CMOS for operation up to 250°C", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. VIII.9-14, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Stemmer, J.1
  • 23
    • 84876716278 scopus 로고
    • Design considerations in high temperature analog CMOS integrated circuits
    • Sept.
    • F.S. Shoucair, "Design considerations in high temperature analog CMOS integrated circuits", IEEE Trans, on Comp. Hybrids and Manuf. Tech., vol. 9, no3, pp. 242-251, Sept. 1986.
    • (1986) IEEE Trans, on Comp. Hybrids and Manuf. Tech. , vol.9 , Issue.3 , pp. 242-251
    • Shoucair, F.S.1
  • 24
    • 0030241117 scopus 로고    scopus 로고
    • A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a Silicon-on-Insulator micropower OTA
    • Sept.
    • F. Silveira et al, "A gm/ID based methodology for the design of CMOS analog circuits and its application to the synthesis of a Silicon-on-Insulator micropower OTA", IEEE Journal of Solid-State Circuits, vol. 31, no9, pp. 1314-1319, Sept. 1996.
    • (1996) IEEE Journal of Solid-State Circuits , vol.31 , Issue.9 , pp. 1314-1319
    • Silveira, F.1
  • 25
    • 0030084276 scopus 로고    scopus 로고
    • Design of SOI CMOS operational amplifiers for applications up to 300°C
    • Feb.
    • J.-P. Eggermont et al, "Design of SOI CMOS operational amplifiers for applications up to 300°C", IEEE Journal of Solid-State Circuits, vol. 31, no2, pp. 179-186, Feb. 1996.
    • (1996) IEEE Journal of Solid-State Circuits , vol.31 , Issue.2 , pp. 179-186
    • Eggermont, J.-P.1
  • 26
    • 0021387284 scopus 로고
    • Electrical characteristics of large-scale integration Silicon MOSFETs at very high temperatures, Part III: Modeling and circuit behavior
    • March
    • Shoucair F.S., Hwang W. and Jain P., "Electrical characteristics of large-scale integration Silicon MOSFETs at very high temperatures, Part III: Modeling and circuit behavior", IEEE Trans, on Comp. Hybrids and Manuf. Tech., vol. 7, no1, pp. 146-153, March 1984.
    • (1984) IEEE Trans, on Comp. Hybrids and Manuf. Tech. , vol.7 , Issue.1 , pp. 146-153
    • Shoucair, F.S.1    Hwang, W.2    Jain, P.3
  • 27
    • 0031118312 scopus 로고    scopus 로고
    • Fully-depleted SOI-CMOS technology for high temperature IC applications
    • Jan.
    • B. Gentinne et al, "Fully-depleted SOI-CMOS technology for high temperature IC applications", Materials Science and Enginneering - B, vol. 46, no1, pp. 1-7, Jan. 1997.
    • (1997) Materials Science and Enginneering - B , vol.46 , Issue.1 , pp. 1-7
    • Gentinne, B.1
  • 29
    • 6244248870 scopus 로고
    • Technology and performance of a high temperature stable (up to 300°C) operational amplifier on GaAs
    • (Albuquerque, USA), June
    • T. Böttner et al, "Technology and performance of a high temperature stable (up to 300°C) operational amplifier on GaAs", Proc. 1st Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. 77-82, June 1991.
    • (1991) Proc. 1st Int. High Temperature Electronics Conf. , pp. 77-82
    • Böttner, T.1
  • 30
    • 4243883636 scopus 로고
    • High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC
    • (Charlotte, USA), June
    • D.M. Brown et al, "High temperature silicon carbide planar IC technology and first monolithic SiC operational amplifier IC", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. XI. 17-22, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Brown, D.M.1
  • 31
    • 6244285945 scopus 로고    scopus 로고
    • Operational amplifier design using GaAs MESFET for temperature applications up to 35O0C
    • (Albuquerque, USA), June
    • P. Baureis et al, "Operational amplifier design using GaAs MESFET for temperature applications up to 35O0C", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. IV.3-8, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Baureis, P.1
  • 32
    • 84862707077 scopus 로고    scopus 로고
    • Implementation of a 83 MHz high temperature β-SiC MESFET operational amplifier
    • (Albuquerque, USA), June
    • KK. Diogu et al, "Implementation of a 83 MHz high temperature β-SiC MESFET operational amplifier", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. VIII.21-31, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Diogu, K.K.1
  • 34
    • 26144462864 scopus 로고
    • The requirements for high temperature electronics in & future high speed civil transport (HSCT)
    • (Charlotte, USA), June
    • C.M. Carlin and J.K. Ray, "The requirements for high temperature electronics in & future high speed civil transport (HSCT)", Proc. 2nd Int. High Temperature Electronics Conf. (Charlotte, USA), pp. 1.19-26, June 1994.
    • (1994) Proc. 2nd Int. High Temperature Electronics Conf.
    • Carlin, C.M.1    Ray, J.K.2
  • 35
    • 4243965062 scopus 로고    scopus 로고
    • An SOI smart-power solenoid driver for 300°C operation
    • (Albuquerque, USA), June
    • J.B. McKitterick et al, "An SOI smart-power solenoid driver for 300°C operation", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. XV. 17-22, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • McKitterick, J.B.1
  • 36
    • 6244277445 scopus 로고    scopus 로고
    • A precision pulse-width controlled current source in SIMOX technology for high temperature applications up to 570K
    • (Albuquerque, USA), June
    • M. Verbeck and H.-L. Fiedler, "A precision pulse-width controlled current source in SIMOX technology for high temperature applications up to 570K", Proc. 3rd Int. High Temperature Electronics Conf. (Albuquerque, USA), pp. XI.21-26, June 1996.
    • (1996) Proc. 3rd Int. High Temperature Electronics Conf.
    • Verbeck, M.1    Fiedler, H.-L.2
  • 37
    • 0030418637 scopus 로고    scopus 로고
    • SOI implementation of low-voltage and high-temperature MOSFET-C continuous-time filters
    • (Fort Myers, USA), October
    • V. Dessard et al, "SOI implementation of low-voltage and high-temperature MOSFET-C continuous-time filters", , IEEE Int. SOI Conf. (Fort Myers, USA), pp. 24-25, October 1996.
    • (1996) IEEE Int. SOI Conf. , pp. 24-25
    • Dessard, V.1
  • 38
    • 0030381532 scopus 로고    scopus 로고
    • A SOI-CMOS micro-power first-order Sigma-Delta modulator
    • (Fort Myers, USA), October
    • A. Viviani, D. Flandre, P. Jespers, "A SOI-CMOS micro-power first-order Sigma-Delta modulator", IEEE Int. SOI Conf. (Fort Myers, USA), pp. 110-111, October 1996.
    • (1996) IEEE Int. SOI Conf. , pp. 110-111
    • Viviani, A.1    Flandre, D.2    Jespers, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.