Lattice modification and luminescence of dry-etched Si-Si1-xGex quantum dots

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3007, Issue , 1997, Pages 170-177

  Tang, Yin Sheng ^a,b   Hicks, Simon E ^a   Wilkinson, Chris D W ^a   Sotomayor Torres, C M ^c   Ni, W X ^d   Birch, Jens ^d   Joelsson, J B ^d   Hansson, Goeran V ^d   Kvick, A ^e   Wang, K L ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b University of California   (United States)

^c UNIVERSITY OF WUPPERTAL   (Germany)

^d LINKÖPING UNIVERSITY   (Sweden)

^e EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Electroluminescence; Light emitting diodes; Nanofabrication; Photoluminescence; Si SiGe quantum dots; Stressed SiNx; x ray diffraction

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; DIODES; ELECTROLUMINESCENCE; ELECTROOPTICAL DEVICES; GERMANIUM; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL WAVEGUIDES; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON; SILICON ALLOYS; SILICON NITRIDE; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ETCHING; FABRICATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SYNCHROTRON RADIATION;

FABRICATION PROCEDURE; LATTICE MODIFICATION; LUMINESCENCE INTENSITIES; NANOFABRICATION; ROOM-TEMPERATURE (RT); SI-SIGE QUANTUM DOTS; SI-TECHNOLOGY; SI1-XGEX; SINGLE QUANTUM WELL (SQW); STRESSED SINX; SUPERLATTICE (SL) STRUCTURE; SYNCHROTRON SOURCES; DRY ETCHING; SINGLE QUANTUM WELLS;

SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

EID: 0031359244     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273851     Document Type: Conference Paper

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