Low-threshold lasers based on GaSb/GalnAsSb/AlGalnAsSb double heterostructures prepared by liquid-phase epitaxy from antimony-rich fluxes

Technical Physics Letters

Volumn 22, Issue 1, 1996, Pages 52-53

  Vasil'ev, V I ^a   Deryagin, A G ^a   Kuchinskii V I ^a   Lunev, A V ^a   Smirnov, V M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

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EID: 0030543621     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

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5. V. I. Vasil'ev, V. V. Kuznetzov, V. A. Mishurny, V. V. Sazonov, and N. N. Faleev, First Int. Conf. on Epitaxial Growth, Budapest (1990), pp. 659-663.
6. M. Morosini, J. L. Herrera-Perez, M. Loural, A. Von Zuben, A Da Silveira, and N. Patel, IEEE J. Quantum Electron. QK-29, 2103 (1993).