Zeeman study of the 0.9 eV emission in AlN and GaN

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1131-1136

  Thurian, P ^a   Loa, I ^a   Maxim, P ^a   Pressel, K ^b   Hoffmann, A ^a   Thomsen, C ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IHP   (Germany)

Author keywords

AlN; GaN; Transition metals; V3+, photoluminescence; Zeeman effect

Indexed keywords

ELECTRON TRANSITIONS; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

ALUMINUM NITRIDE; GALLIUM NITRIDE; ZEEMAN EFFECTS; ZERO PHONON LINES;

MAGNETOOPTICAL EFFECTS;

EID: 0031358814     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1131     Document Type: Article

References (11)

1. K. Pressel, R. Heitz, S. Nilsson, P. Thurian, A. Hoffmann, and B. K. Meyer, MRS, Boston, 1996, Symp. Proc. Vol. 395, 613
2. R. Heitz, P. Thurian, I. Loa, L. Eckey, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer, and E.N. Mokhov, Appl. Phys. Lett. 67, 2822 (1995).
3. K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki, and H. Amano, Mat. Science Forum 143-147, 93 (1994)
4. R. Heitz, P. Thurian, K. Pressel, I. Loa, L. Eckey, A. Hoffmann, I. Broser, B.K. Meyer, and E.N. Mokhov, Phys. Rev. B 52, 16508 (1995).
5. J. Baur, U. Kaufmann, M. Kunzer, J. Schneider, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu, Mat. Science Forum 196-201, 55 (1995)
6. B. Kaufmann, A. Dörnen, V. Härle, H. Bolay, F. Scholz, and G. Pensl, Appl. Phys. Lett. 68, 203 (1996)
7. G. Aszodi and U. Kaufmann, Phys. Rev. B 32, 7108 (1985)
8. R. Heitz, A. Hoffmann, B. Hausmann, and I. Broser J. of Lum. 48&49, 689 (1991)
9. A. Hausmann and E. Blaschke, Z. Phys. 230, 255 (1970)
10. A. Abragam and B. Bleaney in EPR of Transition Ions, Oxford University Press, 1970,426 ff.
11. G. Goetz, U. W. Pohl, H.-J. Schulz, and M. Thiede, J. Lumin. 60&61, 16 (1994)