Empirical reliability models of retention failures in a ferroelectric memory device using SrBi2(Ta,Nb)2O9

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 45-55

  Shimada, Y ^a   Azuma, M ^a   Nakao, K ^a   Chaya, S ^a   Moriwaki, N ^a   Otsuki, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Bi layered perovskite; Ferroelectric memory; Retention; SrBi2(Ta,Nb)2O9

Indexed keywords

ACTIVATION ENERGY; DATA STORAGE EQUIPMENT; FAILURE ANALYSIS; MATHEMATICAL MODELS; PEROVSKITE; RELIABILITY; STRONTIUM COMPOUNDS; THERMAL EFFECTS;

EMPIRICAL RELIABILITY MODELS; STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC DEVICES;

EID: 0031357361     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012980     Document Type: Article

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