Characterization of closed space vapor transport GaP epitaxial layers

Journal of Electronic Materials

Volumn 25, Issue 12, 1996, Pages 1851-1857

  Mimila Arroyo, J ^a   Diaz, J ^a   Derbali, M B ^b   Maaref, H ^b   Alaya, S ^b   Stievenard, D ^c   Bourgoin, J C ^d  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^c CNRS   (France)

^d SORBONNE UNIVERSITÉ   (France)

Author keywords

Deep level transient spectroscopy (DLTS); Epitaxy; EPR; GaP; Photoluminescence (PL)

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; EPITAXIAL GROWTH; PHOTOLUMINESCENCE; THIN FILMS;

CLOSED SPACE VAPOR TRANSPORT TECHNIQUE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030386646     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02657165     Document Type: Article

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