Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system

Thin Solid Films

Volumn 311, Issue 1-2, 1997, Pages 28-32

  Kurmaev, E Z ^a   Shamin, S N ^a   Galakhov, V R ^a   Kasko, I ^b  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED CIRCUITS IIS   (Germany)

Author keywords

Buried layers; Interfaces; Microstructural and microchemical film characterization; X ray emission spectroscopy

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; EXCIMER LASERS; INTERFACES (MATERIALS); IRRADIATION; LASER APPLICATIONS; MICROSTRUCTURE; OXIDES; PHASE COMPOSITION; TEMPERATURE; THICKNESS MEASUREMENT; X RAY SPECTROSCOPY;

ENERGY RESOLVED X RAY EMISSION SPECTROSCOPY; MICROCHEMICAL FILM CHARACTERIZATION; SILICIDATION;

MULTILAYERS;

EID: 0031354503     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00398-2     Document Type: Article

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