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Solid State Phenomena

Volumn 54, Issue , 1997, Pages 86-93

Influence of the host composition on the equilibrium structure of Er-centers in silicon

(7) Pizzini, S a,d Donghi, M a Binetti, S a Gelmi, I a Cavallini, A b Fraboni, F b Wagner, G c

a Istituto Nazionale per la Fisica della Materia Milan (Italy)

b INFM (Italy)

c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

d Ist Naz per la Fis della Materia (Italy)

Author keywords

DLTS; EXAFS; Light Emitting Structures; LPE; Photoluminescence; Si:Er

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC STRUCTURE; ERBIUM; HEAT TREATMENT; LIQUID PHASE EPITAXY; MASS SPECTROMETRY; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; X RAY SPECTROSCOPY;

EXTENDED X RAY ABSORPTION SPECTROSCOPY (EXAFS); SECONDARY NEUTRAL ATOMS MASS SPECTROMETRY (SNMS); SPREADING RESISTANCE (SR);

SEMICONDUCTING SILICON;

EID: 0031354488 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.54.86 Document Type: Article

Times cited : (3)

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