|
|
Volumn 422, Issue , 1996, Pages 87-92
|
|
About the electrical and structural properties of erbium thermally diffused in single crystal silicon
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CARRIER CONCENTRATION;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
ERBIUM COMPOUNDS;
MICROSTRUCTURE;
OPTOELECTRONIC DEVICES;
PHASE INTERFACES;
PHOTOLUMINESCENCE;
SILICON;
SINGLE CRYSTALS;
THERMAL DIFFUSION IN SOLIDS;
DIFFUSED LAYERS;
ERBIUM OXIDES;
OPTICAL ACTIVITY;
SINGLE CRYSTAL SILICON;
ERBIUM;
|
|
EID: 0030388245
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-422-87 Document Type: Conference Paper |
|
Times cited : (2)
|
|
References (7)
|
