A 40-Gbit

IEICE Transactions on Electronics

Volumn E80-C, Issue 12, 1997, Pages 1624-1627

  Murata, Koichi ^a   Otsuji, Taiichi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Decision 1C; Gaas mesfet; Super dynamic d ff; Wideband amplifier

Indexed keywords

BROADBAND AMPLIFIERS; BUFFER CIRCUITS; FLIP FLOP CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING GALLIUM ARSENIDE;

DECISION INTEGRATED CIRCUITS;

MESFET DEVICES;

EID: 0031348387     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Y. Kuriyama, T. Sugiyama, S. Hongo, J. Akagi, K. Tsuda, N. lizuka, and M. Obara, "A 40-GHz D-type flip-flop using AlGaAs/GaAs HBT's," GaAs 1C Symp. Tech. Dig., pp. 189-192, 1994
2. M. Yoneyama, A. Sano, K. Hagimoto, T. Otsuji, K. Murata, Y. Imai, S. Yamaguchi, T. Enoki, and E. Sano, "Optical repeater circuits using 40-Gbit/s InAlAs/InGaAs HEMT digital 1C chip set," IEEE MTT-S IMS. Tech. Dig., pp. 461-464, 1997
3. J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein, and L. Schmidt, "A 22 Gb/s décision circuit and a 32 Gb/s regenerating demultiplexer 1C fabricated in silicon bipolar technology," BCTM. Tech. Dig., pp. 151-154, 1992
4. T. Otsuji, M. Yoneyama, K. Murata, and E. Sano, "A super-dynamic flip-flop circuit for broadband application up to 24-Gbit/s utilizing production-level 0.2-(xm GaAs MESFETs," GaAs 1C Symp. Tech. Dig., pp. 145-148, 1996.
5. T. Otsuji, K. Murata, M. Tokumitsu, and S. Sugitani, "32 Gbit/s super-dynamic decision 1C using 0.13 jim GaA MESFETs with multilayer-interconnection structure," IEE Electron. Lett., vol. 33, no. 6, pp. 480-482, 1996
6. N. Ishihara, O. Nakajima, H. Ichino, and Y. Yamauchi, "9 GHz bandwidth, 8-20 dB controllable-gain monolithic amplifier using AlGaAs/GaAs HBT technology," IEE Electron. Lett., vol.25, no. 19, pp. 1317-1318, 1989
7. M. Tokumitsu, M. Hirano, T. Otsuji, S. Yamaguchi, and K. Yamasaki, "A 0.1-um self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultrahigh-speed ICs," IEDM. Tech. Dig., pp. 211-214, 1996
8. M. Ohhata, M. Togashi, K. Murata, and S. Yamaguchi, "25 Gbit/s selector module using 0.2 urn GaAs MESFET technology," IEE Electron. Lett., vol. 29, no. 11, pp. 950- 951, 1993
9. T. Otsuji, M. Yoneyama, Y. Imai, S. Yamaguchi, T. Enoki, Y. Umeda, and E. Sano "46 Gbit/s multiplexer and 40 Gbit/s demultiplexer 1C modules using InAlAs/ InGaAs/InP HEMTs," IEE Electron. Lett., vol. 32, no. 7, pp. 685-686, 1996.