9GHz Bandwidth, 8-20dB Controllable-Gain Monolithic Amplifier Using AIGaAs/GaAs HBT Technology

Electronics Letters

Volumn 25, Issue 19, 1989, Pages 1317-1318

  Ishihara, N ^a   Nakajima, O ^a   Ichino, H ^a   Yamauchi, Y ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Amplifiers; Bipolar devices; Integrated circuits; Transistors

Indexed keywords

AMPLIFIERS, MICROWAVE; INTEGRATED CIRCUITS, MONOLITHIC; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS, BIPOLAR--HETEROJUNCTIONS;

CONTROLLABLE-GAIN AMPLIFIER; MONOLITHIC AMPLIFIER; PARALLEL FEEDBACK;

AMPLIFIERS, BROADBAND;

EID: 0024734002     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19890881     Document Type: Article

References (9)

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