The use of EM simulation in on-wafer microwave device de-embedding

IEE Colloquium (Digest)

Volumn , Issue 377, 1997, Pages

  Gould, P A ^a   Davis, R G ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTROMAGNETIC FIELD THEORY; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT;

ELECTROMAGNETIC SIMULATION; MICROWAVE DEVICE DE EMBEDDING;

MICROWAVE INTEGRATED CIRCUITS;

EID: 0031345763     PISSN: 09633308     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. "Specifying calibration standards for the 8510 network analyser.", Hewlett Packard Product Note 8510-5A, p10.
2. Sonnet Software, Inc., 1020 Seventh North Street, Suite 210, Liverpool, NY 13088, USA.
3. P. J. van Wijnen, "A new straightforward calibration and correction procedure for on-wafer, high frequency S-parameter measurements (45MHz - 18GHz).", IEEE Bipolar Circuits and Tech. Meet. Dig., 1987, pp. 70-73.
4. H. Cho, D Burk, "A three step method for de-embedding of high frequency S-parameter measurements.", IEEE Trans, on Electron Devices, vol. 38, No. 6, June 1991, pp. 1371-1375.
5. M. Koolen, "An improved de-embedding technique for on-wafer high frequency characterisation", IEEE 1991 Bipolar Circuits and Tech. Meet. Dig. 8.1, pp. 188-191.
6. Libra IV, HP EEsof Division, 5601 Lindero Canyon Road, Westlake Village, CA 91362, Canada.