NMR study of carrier states and trapping complexes in the transparent conductor ZnO:MIII

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1365-1370

  Warren Jr , W W ^a   Roberts, N ^a   Wang, R P ^a,b   Sleight, A W ^a  

^a OREGON STATE UNIVERSITY   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Complexes; Group III impurity states; II VI compounds; NMR; Transparent conductors

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; CRYSTAL IMPURITIES; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; STOICHIOMETRY; TRANSPARENCY; ZINC OXIDE;

ELECTRON TRAPPING;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031340107     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

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