Energy transfer processes at erbium ions in silicon

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1485-1490

  Michel, J ^a   Palm, J ^a   Chen, T ^a   Duan, X ^a   Ouellette, E ^a   Ahn, S H ^a   Nelson, S F ^b   Kimerling, L C ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Health Services and Department of Biology   (United States)

Author keywords

Electroluminescence; Erbium; Excitation; Light emitting devices; Photoluminescence

Indexed keywords

ELECTROLUMINESCENCE; ENERGY TRANSFER; ERBIUM; LIGHT EMITTING DIODES; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

DEEXCITATION PROCESSES; JUNCTION PHOTOCURRENT SPECTROSCOPY (JPCS);

SEMICONDUCTING SILICON;

EID: 0031338864     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1485     Document Type: Article

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