Local relaxations and electric-field gradient at the Cd site in heavily doped Si:Cd

Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 23, 1996, Pages 16701-16705

  Casali, R ^a   Caravaca, M ^a   Rodriguez, C ^b  

^a UNIVERSIDAD NACIONAL DEL NORDESTE   (Argentina)

^b Instituto de Fisica de Liquidos y Sistemas Biologicos   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037746487     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.54.16701     Document Type: Article

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