Growth of InAs/GaSb strained layer superlattices. I

Journal of Crystal Growth

Volumn 145, Issue 1-4, 1994, Pages 778-785

  Booker, G R ^a   Klipstein, P C ^a   Lakrimi, M ^a   Lyapin, S ^a   Mason, N J ^a   Nicholas, R J ^a   Seong, T Y ^a   Symons, D M ^a   Vaughan, T A ^a   Walker, P J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ENERGY GAP; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCONDUCTIVITY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM ARSENIDE/GALLIUM ANTIMONIDE STRAINED LAYER SUPERLATTICES;

SEMICONDUCTOR GROWTH;

EID: 0028762136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(94)91142-8     Document Type: Article

References (15)

1. Interface studies of InAs/GaSb superlattices by Raman scattering
2. Raman scattering analysis of InAs/GaSb ultrathin-layer superlattices grown by molecular beam epitaxy
3. Proc. 8th Int. Conf. on Vapour Phase Epitaxy