Simulation of self-heating HBTs based on isothermal gummel-poon model

1997 27th European Microwave Conference, EuMC 1997

Volumn 2, Issue , 1997, Pages 903-908

  Zhu, Y ^a   Twynam, J K ^a   Kishimoto, K ^a   Yagura, M ^a   Hasegawa, M ^a   Hasegawa, T ^a   Sakuno, Z ^a   Yamada, A ^a   Suematsu, E ^a   Sato, H ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASE CURRENTS; CIRCUIT SIMULATORS; EMITTER JUNCTIONS; GUMMEL-POON MODELING; HOLE INJECTION CURRENTS; MODEL PARAMETERS; SELF-HEATING; THERMAL PARAMETERS;

ISOTHERMS; HETEROJUNCTION BIPOLAR TRANSISTORS;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

HOLE INJECTION CURRENTS; ISOTHERMAL GUMMEL-POON MODEL; SELF HEATING EFFECTS;

EID: 0031332386     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1997.337910     Document Type: Conference Paper

References (9)

1. P. Grossman and J. Choma, Jr., "Large signal modeling of HBT's including self-heating and transit tiem effects, " 1992, IEEE Trans. Microwave Theory Tech.,40, pp. 449464.
2. R. Hajji , A. Kouki, S. El-Rabaie, F. Ghannouchi, " Systematic DC/small-signal/large-signal analysis of heterojunction bipolar transistors using a new consistent nonlinear model, " 1996, EEE Trans. Microwave Theory Tech., 44, pp. 233-240.
3. W. Liu, S. Fan T. Henderson, and D. Davito, " Temperature dependence of current gains in GaInP/GaAs and AlGaAs/GaAs heterojunction bipolar tansistors," 1993, EEE Trans. Electron Devices, 40, pp. 1351-1353.
4. N. Chand, R. Fischer, T. Henderson, J. Klem, W. Kopp, and H. Morkoc, 'Temperature dependence ofcurrent gain in AlGaAs/GaAs heterojunction bipolar transistors," 1984, Appl. Phys. Lett., 45, pp. 1086-1088.
5. W. Filensky and H. Beneking, " New technique for determination of static emitter and collector series resistances of bipolar transistors," 1981, Electronics Lett., 17, pp. 503-504.
6. T. Zimmer, A. Meresse, Ph. Cazenave, J. Dom, " Simple determination of BJT extrinsic base resistance," 1991, Electronics Lett., 27, pp. 1895-1896.
7. D. Dawson, A. Gupta, and M. Salib, "CW measurement ofHBT thermal resistance, " 1992, IEEE Trans. Electron Devices, 39, pp. 2235-2239.
8. M. Faleh, J. Tasselli, J. Bailbe, and A. Marty, 'Transistor-based evaluation of conduction-band offset in GaInP/GaAs heterojunction," 1996, Appl. Phys. Lett., 69, pp 1288-1290.
9. J. Liou, "Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors," 1991, J. AppI. Phys., 69, pp. 3328-3334.