Interfacial structure between epitaxial diamond films and silicon substrates

Chinese Physics Letters

Volumn 14, Issue 2, 1997, Pages 145-147

  Gao, Qiao Jun ^a   You, Li Ping ^a   Pan, Xiao Hui ^a   Zhang, Fan ^a   Peng, Xiao Fu ^b   Lin, Zeng Dong ^b  

^a PEKING UNIVERSITY   (China)

^b Beijing Institute of Powder Metallurgy   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SILICON;

CHEMICAL VAPOR DEPOSITION METHODS; EPITAXIAL DIAMOND FILMS; FILM/SUBSTRATE; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOT FILAMENTS CHEMICAL VAPOR DEPOSITIONS; INTERFACIAL STRUCTURES; LATTICE MISFITS; MIRROR POLISHED SILICON; ORIENTATION RELATIONSHIP; SILICON SUBSTRATES;

SUBSTRATES;

EID: 0031322802     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/14/2/019     Document Type: Article

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