Direct observations of heteroepitaxial diamond on a silicon(110) substrate by microwave plasma chemical vapor deposition

Journal of Materials Research

Volumn 11, Issue 4, 1996, Pages 1002-1010

  Chen, C J ^a   Chang, L ^b   Lin, T S ^c   Chen, F R ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b National Science and Technology Council   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; FILM GROWTH; PLASMA APPLICATIONS; SEMICONDUCTING DIAMONDS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

HETEROEPITAXIAL DIAMOND; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0030129194     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0125     Document Type: Article

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