Material parameter and performance variation in 4 × 4 pixellated CdZnTe detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3115, Issue , 1997, Pages 56-61

  Brunett, B A ^a   Toney, J E ^a   Schlesinger, T E ^a   James, R B ^a   Driver, M C ^a   Eissler, E E ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

ray spectrometers; Cadmium Zinc Telluride; Photoluminescence; PICTS; Pixel detectors; Radiation detectors

Indexed keywords

ARRAYS; CORRELATION METHODS; IMAGE QUALITY; IMAGING SYSTEMS; IONIZING RADIATION; NONDESTRUCTIVE EXAMINATION; PHOTOCURRENTS; PHOTOLUMINESCENCE; RADIATION DETECTORS; SEMICONDUCTING CADMIUM TELLURIDE; SPECTRUM ANALYSIS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

PHOTO INDUCED TRANSIENT CURRENT SPECTROSCOPY (PICTS); PIXEL DETECTORS;

GAMMA RAY SPECTROMETERS;

EID: 0031288731     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.277704     Document Type: Conference Paper

References (7)

1. Photoinduced current transient spectroscopy in high-resistivity bulk materials: Instrumentation and methodology
2. Analysis of Photoinduced Current Transient Spectroscopy(PICTS) data by a regularisation method: Application to conpensation defects in CdTe
3. Investigation of deep levels in X-Ray detector material with Photo Induced Current Transient Spectroscopy(PICTS)
4. 1-xTe single crystals
5. Composition and performance mapping of CdZnTe nuclear spectrometers
6. xTe grown by high-pressure Bridgman