Temperature-dependent Hall analysis of carbon-doped GaAs

Thin Solid Films

Volumn 310, Issue 1-2, 1997, Pages 63-66

  Kim, Seong Il ^a   Son, Chang Sik ^a   Chung, Sang Wook ^b   Park, Young K ^a   Kim, Eun Kyu ^a   Min, Suk Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

Carbon; Electrical properties and measurements; Gallium arsenide; Semiconductors

Indexed keywords

CARBON; CHARGE CARRIERS; CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; HALL EFFECT; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CARRIER MOBILITY;

SEMICONDUCTING FILMS;

EID: 0031277171     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00344-1     Document Type: Article

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