Bias and thickness dependence of the infra-red PtSi/p-Si Schottky diode studied by internal photoemission

Solid-State Electronics

Volumn 39, Issue 2, 1996, Pages 277-280

  Chin, V W L ^b   Storey, J W V ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b Pacific Solar Pty Ltd   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CRYSTAL IMPURITIES; ELECTRIC CONTACTS; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; EMISSION SPECTROSCOPY; PLATINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

ACCEPTOR DENSITY; FOWLER RELATIONSHIP; INTERNAL PHOTOEMISSION; METAL THICKNESS; REVERSE BIAS; SCATTERERS; SCHOTTKY EMISSION COEFFICIENT; ZERO BIAS BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0030084115     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00130-1     Document Type: Review

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