Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 167-170

  Anholt, Robert ^a   Bozada, C ^a   Desalvo, G ^a   Dettmer, R ^a   Ebel, J ^a   Gillespie, J ^a   Havasy, C ^a   Ito, C ^a   Jenkins, T ^a   Nakano, K ^a   Pettiford, C ^a   Quach, T ^a   Sewell, J ^a   Via, D ^a  

^a Gateway Modeling Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

SELF HEATING EFFECTS; THERMAL IMPEDANCES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030417542     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)