Photoemission study of Na growth on the Si(100)c(4 × 2) surface at low temperature

Surface Science

Volumn 391, Issue 1-3, 1997, Pages 237-244

  Chao, Y C ^a   Johansson, L S O ^b   Uhrberg, R I G ^a  

^a LINKÖPING INSTITUTE OF TECHNOLOGY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Alkali metals; Chemisorption; Growth; Metal semiconductor interfaces; Morphology; Photoelectron emission; Roughness and topography; Silicon; Soft X ray photoelectron spectroscopy (using synchrotron radiation); Surface structure

Indexed keywords

ADSORPTION; FERMI LEVEL; GROWTH (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; PHOTOEMISSION; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES; SODIUM; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

STRANSKI KRASTANOV MODE; SURFACE TOPOGRAPHY;

CHEMISORPTION;

EID: 0031273807     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00487-1     Document Type: Article

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