Core-level study of the K/Si(100)c(4 × 2) system: Beyond the room temperature saturation coverage

Surface Science

Volumn 372, Issue 1-3, 1997, Pages 64-70

  Chao, Y C ^a   Johansson, L S O ^b   Uhrberg, R I G ^a  

^a LINKÖPING INSTITUTE OF TECHNOLOGY   (Sweden)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Alkali metals; Chemisorption; Growth; Metal semiconductor interfaces; Photoelectron emission; Silicon; Soft X ray photoelectron spectroscopy

Indexed keywords

ATTENUATION; ELECTRON ENERGY LEVELS; GROWTH (MATERIALS); INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; POTASSIUM; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS;

CORE LEVEL SPECTRA; ROOM TEMPERATURE SATURATION COVERAGE;

SEMICONDUCTING SILICON;

EID: 0031075469     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01110-7     Document Type: Article

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