MOMBE growth of InGaAs using trisdimethylaminoarsenic

Journal of Crystal Growth

Volumn 181, Issue 3, 1997, Pages 193-196

  Hidaka, K ^a   Asahi, H ^a   Yamamoto, K ^a   Asami, K ^a   Satoh, J ^a   Gonda, S ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

InGaAs; MOMBE; Morphology; PL; TDMAAs

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE); TRIETHYLGALLIUM; TRIMETHYLINDIUM; TRISDIMETHYLAMINOARSENIC;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031272247     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00287-X     Document Type: Article

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