CBE growth of InGaAs(P) alloys using TDMAAs and TBP

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 122-124

  Lamare, B ^a   Benchimol, J L ^a   Ossart, P ^a   Le Roux, G ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; COMPOSITION; MORPHOLOGY; PHOTOLUMINESCENCE; SURFACES; VAPOR PRESSURE; X RAY CRYSTALLOGRAPHY;

GROWTH RATE; GROWTH TEMPERATURE; TERTIARYBUTYLPHOSPHINE; TRISDIMETHYLAMINOARSENIC;

INDIUM ALLOYS;

EID: 0030195011     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01014-9     Document Type: Article

References (11)

1. E.A. Beam III, T.S. Henderson, A.C. Seabourgh and J.Y. Yang, J. Crystal Growth 116 (1992) 436.
2. D. Ritter, M.B. Panish, R.A. Hamm, D. Gershoni and I. Brener, Appl. Phys. Lett. 56 (1990) 1548.
3. C.R. Abernathy, P. Whisk, D.A. Bohling and G.T. Muhr, Appl. Phys. Lett. 60 (1992) 2421.
4. B. Lamare, J.L. Benchimol, M. Juhel, B. Akamatsu, P. Legay and F. Alexandre, J. Crystal Growth 141 (1994) 347.
5. B Lamare, J.L. Benchimol, R. Driad and P. Launay, Electron. Lett. 30 (1994) 1356.
6. Y. Nomura, S. Goto and Y. Morishita, Jpn. J. Appl. Phys. 33 (1994) 1356.
7. B. Lamare and J.L. Benchimol, Mater. Sci. Eng. B 27 (1994) 99.
8. H.K. Dong, N.Y. Li and C.W. Tu, in: Proc. 36th Electronics Materials Conf., Boulder, USA, 1994.
9. C.R. Abernathy, D.A. Bohling, G.T. Muhr and P.W. Wisk, J. Vac. Sci. Technol. B 13 (1995) 59.
10. J.L. Benchimol, M. Juhel, M. Petitjean et A. Ancilotti, J. Vac. Sci. Technol. B 13 (1995) 55.
11. J.L. Benchimol, G. Le Roux, H. Thibierge, C. Daguet, F. Alexandre and F. Brillouet, J. Crystal Growth 107 (1991) 978.