Hydrogen passivation of interstitial Zn defects in hetero-epitaxial InP cell structures and influence on device characteristics

Progress in Photovoltaics: Research and Applications

Volumn 5, Issue 6, 1997, Pages 423-431

  Ringel, S A ^a   Chatterjee, B ^a   Hoffman Jr , R W ^b  

^a Ohio State University   (United States)

^b Essential Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); HYDROGEN; HYDROGENATION; PASSIVATION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; ZINC;

HETERO EPITAXIAL INDIUM PHOSPHIDE CELL; HYDROGEN PASSIVATION; LATTICE MISMATCH;

SOLAR CELLS;

EID: 0031272011     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1099-159x(199711/12)5:6<423::aid-pip194>3.0.co;2-t     Document Type: Article

References (8)

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4. B. Chatterjee, S. A. Ringel, R. Sieg, R. Hoffman and I. Weinberg, 'Hydrogen passivation of dislocation in InP on GaAs heterostructures', Appl. Phys. Lett., 65, 58-61 (1994).
5. +n heteroepitaxial InP solar cell structures', Prog. Photovolt. Res. Appl., 4, 91-100 (1996).
6. G. J. Van Gurp, T. Van Dongen, G. M. Fontijn, J. M. Jacobs and D. L. A. Tjaden, 'Interstitial and substitutional Zn in InP and InGaAsP', J. Appl. Phys., 65, 553-560 (1988).
7. R. M. Sieg, B. Chatterjee and S. A. Ringel, 'Evidence for enhanced Zn interstitial concentration in strain-relaxed heteroepitaxial InP', Appl. Phys. Lett., 66, 3108-3110 (1995).
8. R. W. Hoffman, N. S. Fatemi, D. M. Wilt, P. Jenkins, D. J. Brinker and D. A. Scheiman, 'High efficiency InP solar cells from low toxicity TBP and TMIn by OMVPE', Proc. 1st IEEE World Conference on Photovoltaic Energy Conversion, 1994, pp. 1882-1885.