Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

Progress in Photovoltaics: Research and Applications

Volumn 4, Issue 2, 1996, Pages 91-100

  Chatterjee, B ^a   Ringel, S A ^a   Hoffman Jr , R ^b  

^a The Ohio State University   (United States)

^b Essential Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); HYDROGEN; HYDROGENATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SOLAR CELLS; SUBSTRATES;

APPARENT DISSOCIATION ENERGY; HETEROEPITAXIAL INDIUM PHOSPHIDE SOLAR CELL STRUCTURES; HYDROGEN TRAPPING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030103363     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199603/04)4:2<91::AID-PIP124>3.0.CO;2-E     Document Type: Conference Paper

References (13)

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