Excess noise in polysilicon thin film transistors operated in kink regime

Electronics Letters

Volumn 33, Issue 24, 1997, Pages 2075-2077

  Giovannini, S ^a   Mariucci, L ^a   Pecora, A ^a   Foglietti, V ^a   Fortunato, G ^a   Reita, C ^b  

^a CNR   (Italy)

^b THALES   (France)

Author keywords

Impact ionisation; Polysilicon; Thin film transistors

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; IONIZATION OF SOLIDS; MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

IMPACT IONIZATION;

THIN FILM TRANSISTORS;

EID: 0031271956     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971392     Document Type: Article

References (11)

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