Electrical characteristics of a WSix contact electrode with a WSixN diffusion barrier formed by using electron cyclotron resonance plasma nitridation

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 3993-3998

  Hirata, A ^a   Hosoya, T ^b   Machida, K ^a   Kyuragi, H ^a   Akiya, H ^a  

^a NTT CORPORATION   (Japan)

^b Yamatake Honeywell Company Limited   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; DIFFUSION; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC RESISTANCE MEASUREMENT; ELECTROCHEMICAL ELECTRODES; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); PLASMA APPLICATIONS;

CONTACT ELECTRODE; DIFFUSION BARRIERS; PLASMA NITRIDATION; TUNGSTEN SILICIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031271788     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838125     Document Type: Article

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