Gain modeling of strained InGaAsP based MQW optical amplifiers

IEEE Photonics Technology Letters

Volumn 9, Issue 11, 1997, Pages 1475-1477

  Debaisieux, Grégoire ^a   Guemmouri, Moustapha ^a   Chelles, Sandrine ^a   Ougazzaden, Abdallah ^a   Hervé Gruyer, Guillaume ^a   Filoche, Marcel ^b   Marzin, Jean Yves ^c  

^a ORANGE LABS   (France)

^b LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

^c CNRS   (France)

Author keywords

Integrated optoelectronics; Quantum well devices; Semiconductor device modeling; Semiconductor optical amplifiers; Strain

Indexed keywords

FIBER LASERS; INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS;

TRANSVERSE ELECTRIC (TE) MODE; TRANSVERSE MAGNETIC (TM) MODE;

QUANTUM WELL LASERS;

EID: 0031271111     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.634713     Document Type: Article

References (6)

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3. C.-S. Chang and S. L. Chuang, "Modeling of strained quantum-well lasers with spin-orbit coupling," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 218-229, June 1995.
4. D. Ahn and S. L. Chuang, "The theory of strained-layer quantum-well lasers with bandgap renormalization," IEEE J. Quantum Electron., vol. 30, pp. 350-365, Feb. 1994.
5. S. W. Corzine, R.-H. Yan, L. A. Coldren, "Optical gain in III-V bulk and quantum well semiconductors" in Quantum Well Lasers, P. S. Zory, Jr., Ed. San Diego, CA: Academic, 1993, ch. 1.
6. D. Sigogne, A. Ougazzaden, D. Meichenin, B. Mersali, A. Carenco, J. C. Simon, I. Valiente, C. Vassallo, and L. Billes, "1.55 μm polarization insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converters," Electron. Lett., vol. 32, no. 15, pp. 1403-1405, 1996.