Influence of annealing on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors

Thin Solid Films

Volumn 310, Issue 1-2, 1997, Pages 327-331

  Lee, Eun Gu ^a   Park, Jin Seong ^a   Lee, Jong Kook ^a   Lee, Jae Gab ^b  

^a Chosun University   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

Annealing; Electrical properties and measurements; Etching; Ferroelectric properties; Hysteresis loop; Internal field; Sputtering

Indexed keywords

ANNEALING; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; FERROELECTRICITY; HYSTERESIS; PLATINUM COMPOUNDS; REACTIVE ION ETCHING; SPUTTER DEPOSITION; THIN FILMS;

THIN FILM CAPACITORS;

CAPACITORS;

EID: 0031270840     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00410-0     Document Type: Article

References (11)

1. J.F. Scott, C.A. Araujo, Science 246 (1989) 1400.
2. D.P. Vijay, S.B. Desu, W. Pan, J. Electrochem. Soc. 140 (1993) 2635.
3. M.R. Poor, C.B. Fleddermann, J. Appl. Phys. 70 (1991) 3385.
4. I. Lefkowitz, T. Mitsui, J. Appl. Phys. 30 (1959) 269.
5. K. Ishihara, T. Ishikawa, K. Hamada, S. Onishi, J. Kudo, K. Sakiyama, Integrated Ferroelectrics 6 (1995) 301.
6. P.K. Larsen, G.J.M. Dormans, D.J. Taylor, P.J. van Veldhoven, J. Appl. Phys. 76 (1994) 2405.
7. E.G. Lee, D.J. Wouters, G. Willems, H.E. Maes, Appl. Phys. Lett. 69 (1996) 1223.
8. U. Robels, J.H. Calderwood, G. Arlt, J. Appl. Phys. 77 (1995) 4002.
9. D. Dimos, W.L. Warren, M.B. Sinclair, B.A. Tuttle, R.W. Schartz, J. Appl. Phys. 76 (1994) 4305.
10. A.G. Chynoweth, Phys. Rev. 113 (1959) 159.
11. K. Okazaki, K. Nagata, J. Am. Ceram. Soc. 56 (1973) 82.