Influence of process parameters on chemical-mechanical polishing of copper

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 143-149

  Stavreva, Z ^a   Zeidler, D ^a   Plotner M ^a   Drescher, K ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Chemical mechanical polishing; Copper; Planarization

Indexed keywords

CHEMICAL POLISHING; COPPER; PRESSURE EFFECTS; SILICA;

CHEMICAL MECHANICAL POLISHING (CMP); PLANARIZATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0031270478     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00105-6     Document Type: Article

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