Asymmetric distribution of oxygen concentration in the Si melt of a Czochralski system

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 722-725

  Yi, K W ^a   Kakimoto, K ^a   Niu, Z G ^b   Eguchi, M ^a   Noguchi, H ^a   Nakamura, S ^a   Mukai, K ^b  

^a NEC CORPORATION   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL GROWTH FROM MELT; ELECTROCHEMICAL ELECTRODES; GRAPHITE; NICKEL COMPOUNDS; OXYGEN SENSORS; SEMICONDUCTING SILICON; TEMPERATURE DISTRIBUTION; THERMOCOUPLES; ZIRCONIA;

ASYMMETRIC DISTRIBUTION; CZOCHRALSKI SYSTEM; MACROSCOPIC SCALE; MICROSCOPIC SCALE; OXYGEN CONCENTRATION MEASUREMENT;

OXYGEN;

EID: 0030081605     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836508     Document Type: Article

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