Electronic structure of AlxGa1 - XAs and GaPxAs1 - X alloys modified virtual crystal approximation calculation using sp3s band structures

Materials Science and Engineering B

Volumn 41, Issue 3, 1996, Pages 304-309

  Ferhat, M ^a   Bouhafs, B ^b   Zaoui, A ^a   Certier, M ^c   Kehlifa, B ^a   Aourag, H ^b  

^a UNIVERSITY OF ORAN   (Algeria)

^b UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^c UNIVERSITÉ DE LORRAINE   (France)

Author keywords

AlxGa1 XAs; Modified virtual crystal approximation calculation; Schr dinger equation; sp3s; Tight binding model

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPOSITION; ELECTRONIC STRUCTURE; ENERGY GAP; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

BAND GAP BOWINGS; BAND GAP CROSSOVER; COMPOSITION DISORDER; MODIFIED VIRTUAL CRYSTAL APPROXIMATION CALCULATION; SCHRODINGER EQUATION; TIGHT BINDING METHOD;

SEMICONDUCTOR MATERIALS;

EID: 0000952117     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01727-8     Document Type: Article

References (37)

1. R.H. Parmenter, Phys. Rev., 97 (1955) 587.
2. A. Baldereschi, E. Hess, K. Maschke, H. Newmann, K.-R. Schulze and K. Unger, J. Phys. C, 10 (1977) 4709.
3. J.A. Van Vechten and J.K. Bergstresser, Phys. Rev. B, 1 (1970). 3351.
4. S. Kristhnamurthy, A. Sher and A.B. Chen, Phys. Rev. Lett., 55 (1985) 320.
5. S. Kristhnamurthy, A. Sher and A.B. Chen, Phys. Rev. B, 33 (1986) 1026.
6. A. Zunger, S.-M. Wei, L.G. Ferreira and J.E. Bernard, Phys. Rev. Lett., 65 (1990) 353.
7. J.A. Mewski and P. Vogl, The Structure of Binary Compounds, North-Holland, Amsterdam, 1989.
8. J.C. Slater and G.F. Koster, Phys. Rev., 94 (1954) 1498.
9. D. Chadi and M.L. Cohen, Phys. Status Solidi (b), 68 (1975) 405.
10. K. Shim, D.N. Talwar and H.-J. Moh, Solid State Commun., 97 (1996) 315.
11. M. Ferhat, A. Zaoui, B. Khelifa and H. Aourag, Solid State Commun., 91 (1994) 407.
12. B. Bouhafs, F. Benkabou, M. Ferhat, B. Khelifa, J.P. Duffour and H. Aourag, Infrared Phys. Technol., 36 (1995) 967.
13. S.J. Lee, T.S. Kown, K. Nahm and C.K. Kim, J. Phys. Condens. Matter, 2 (1990) 3253.
14. S.J. Lee, H.S. Chuang, K. Nahm and C.K. Kim, Phys. Rev. B, 42 (1990) 1452.
15. H. Aourag, M. Ferhat, B. Bouhafs, N. Bouarissa, A. Zaoui, N. Amrane and B. Khelifa, Comp. Mater. Sci., 3 (1995) 393.
16. P. Vogl, H.P. Hjalmarson and J.D. Dow, J. Phys. Chem. Solids, 44 (1983) 365.
17. D.J. Wolford and J.A. Bradley, Solid State Commun., 53 (1985) 1069.
18. D.M. Roessler and D.E. Swets, J. Appl. Phys., 49 (1978) 804.
19. A.C. Carter, P.J. Dean, M.S. Skolnick and R.A. Stradleig, J. Phys. C, 70 (1977) 5111.
20. B. Monemar, Phys. Rev. B, 8 (1973) 5711.
21. J.C. Phillips, Bonds and Bands in Semiconductors, Academic, New York, 1973.
22. M. Bugasi, A.M. Kontkiewicz and H. Mariette, Phys. Rev. B, 28 (1983) 7105.
23. V.B. Gera, R. Gupta and K.P. Jain, J. Phys. Condens. Matter, 1 (1989) 4913.
24. A. Onton and L.M. Foster, J. Appl. Phys., 43 (1972) 5084.
25. H. Mathieu, Phys. Rev. B, 15 (1974) 2048.
26. R. Hill, J. Phys. C, 7 (1974) 521.
27. S.S. Virhubhatla, B. Eyglunent and J.C. Woolley, Can. J. Phys., 47 (1969) 1661.
28. C. Bosio, J.L. Staehlim, M. Guzzi, L. Gurri and R.A. Logan, Phys. Rev. B, 38 (1988) 3263.
29. O. Berolo and J.C. Woolley, Can. J. Phys., 49 (1971) 1335.
30. V.K. Bashenov, V.I. Soloshenko and V.V. Timofenko, Phys. Status Solidi (b), 70 (1975) K 101.
31. M. Altarelli, Solid State Commun., 15 (1974) 1607.
32. M. Capizzi, S. Modesti and A. Frova, Solid State Commun., 39 (1981) 331.
33. A. Baldereschi and K. Maschke, Solid State Commun., 16 (1975) 99.
34. M. Ferhat, H. Aourag and B. Khelifa, Comp. Mater. Sci., 1 (1993) 369.
35. B. Monemar, K.K. Shih and G.D. Petit, J. Appl. Phys., 47 (1976) 2604.
36. T.F. Kuch, D.J. Wolford, R. Potemski, J.A. Bradley, K.H. Kelleher, D. Yan, J.P. Farell, P.M.S. Lesser and F.H. Pollak, Appl. Phys. Lett., 51 (1987) 505.
37. R. Dingle, R.A. Logan and Jr. Arthur, Inst. Phys. Conf. Ser., 33 (1977) 210.