Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1174-1177

  Yeo, P ^a   Ares R ^a   Watkins, S P ^a   Horley, G A ^b   O'Brien, P ^b   Jones, A C ^c  

^a SIMON FRASER UNIVERSITY   (Canada)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c Epichem Limited   (United Kingdom)

Author keywords

Atomic layer epitaxy (ALE); Gallium arsenide; Trineopentylgallium

Indexed keywords

ADSORPTION; DECOMPOSITION; EPITAXIAL GROWTH; FREE RADICALS;

ATOMIC LAYER EPITAXY (ALE); HOMOLYSIS; TRISNEOPENTYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031259444     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0015-x     Document Type: Article

References (13)

1. P.D. Dapkus, B.Y. Maa, Q. Chen, W.G. Jeong and S.P. DenBaars, J. Cryst. Growth, 107, 73 (1991).
2. M. Ozeki, N. Ohtsuka, Y. Sakuma and K. Kodama, J. Cryst. Growth 107, 102 (1991).
3. Ming L. Yu, Thin Solid Films 225, 7 (1993).
4. H. Ohno, S. Ohtsuka, H. Ishii, Y. Matsubara and H. Hasegawa, Appl. Phys. Lett. 54, 2000 (1989).
5. M. Ozeki, Mater. Sci. Reports 8, 116 (1992).
6. C.A. Tran, R. Ares, S.P. Watkins, G. Soerensen and Y. Lacroix, J. Electron. Mater. 24, 1597 (1995).
7. O.T. Beachley, Jr. and J.C. Pazik, Organometallics 7, 1516 (1988).
8. K Kochi, Organometallic Mechanisms and Catalysis, (New York: Academic Press, 1978), p. 241.
9. R. Ares, C.A. Tran and S.P. Watkins, Can. J. Phys. 74, S85 (1996).
10. I. Kamiya, D.E. Aspnes, L.T. Florez and J.B. Harbison, Phys. Rev. B 46, 15894 (1992).
11. K. Mochizuki, M. Ozeki, K. Kodama and N. Ohtsuka, J. Cryst. Growth 93, 557 (1988).
12. B.E. Bent, R.G. Nuzzo and L.H. Dubois, J. Am. Chem. Soc. 111, 1634 (1989).
13. C.R. Abernathy, P.W. Wisk, A.C. Jones and S.A. Rushworth, Appl. Phys. Lett. 61, 180 (1992).