Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer

Electronics Letters

Volumn 32, Issue 2, 1996, Pages 116-117

  Yoo, B S ^a   Chu, H Y ^a   Park, M S ^a   Park, H H ^a   Lee, E H ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

AMORPHOUS MATERIALS; CALCULATIONS; DEPOSITION; ELECTRIC CURRENTS; LIGHT EMISSION; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS;

ANTIGUIDE EFFECT; ELLIPSOMETER; FINITE DIFFERENCE BEAM PROPAGATION METHOD; SCALAR HELMHOLTZ WAVE EQUATION; SEMICONDUCTOR JUNCTION LASERS; SURFACE PASSIVATION; THRESHOLD CURRENTS; TWO DIMENSIONAL NUMERICAL CALCULATION; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0029753413     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960070     Document Type: Article

References (8)

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8. WU, Y.A., CHANG-HASNAIN, C.J., and NABIEV, R.: 'Transverse mode selection with a passive antiguide region in vertical cavity surface emitting lasers', IEEE Photonics Technol. Lett., 1994, 6, pp. 924-926