Realisation of a 0.25 μm NMOSFET using GexSi1-x(x蠐0.4) as Gate Material

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 601-604

  Salm, C ^a   Schmitz, J ^a   Martens, M C ^a   Gravesteijn, D J ^a   Holleman, J ^a   Woerlee, P H ^b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE MATERIALS; NMOSFET;

EID: 84920728632     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. T.-J. King, J.R. Priester, J.D. Short, J.P.McVittie and K.C. Saraswat, Proceedings IEDM '90, 253, (1990).
2. C.Salm, D.T. van Veen, J.Holleman and P.H. Woerlee, Proceedings ESSDERC '95, 131 (1995)
3. J.Schmitz et. al, these proceedings.