An improved method for large-area oriented nucleation of diamond during bias process via hot-filament chemical vapor deposition

Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 163-167

  Li, Xi ^a   Hayashi, Y ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Bias enhanced nucleation; Hollow cathode; Oriented diamond; Plasma sheath

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; NUCLEATION; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES;

HOLLOW CATHODE TECHNIQUE; HOT FILAMENT CHEMICAL VAPOR DEPOSITION (HFCVD); NOMARSKI MICROGRAPHY;

DIAMOND FILMS;

EID: 0031249593     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)00397-0     Document Type: Article

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