SCOPUS 정보 검색 플랫폼

Volumn 308-309, Issue 1-4, 1997, Pages 279-283

Investigation of distribution of defects and impurities in boron-doped CVD diamond film by cathodoluminescence spectroscopy

(8) Wang, Chunlei a,b Hatta, Akimitsu a Jiang, Nan a Won, Jaihyung a Ito, Toshimichi a Hiraki, Akio a Jin, Zengsun b Zou, Guangtian b

a OSAKA UNIVERSITY (Japan)

b JILIN UNIVERSITY (China)

Author keywords

Boron; Cathodoluminescence; CVD diamond; Edge emission; Vacancy

Indexed keywords

BAND STRUCTURE; CATHODOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; FILM GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING BORON; SUBSTRATES;

EDGE EMISSION; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0031248797 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00414-8 Document Type: Article

Times cited : (14)

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