Exposure latitude and CD control study for additively patterned x-ray mask with GBit DRAM complexity

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 195-198

  Baciocchi, M ^a   Di Fabrizio, E ^a   Gentili, M ^a   Grella, L ^a   Maggiora, L ^a   Mastrogiacomo, L ^a   Peschiaroli, D ^a   Choi, S ^b   Jeon, Y J ^b   Chung, H B ^b   Yoo, H J ^b  

^a Ist Elettron dello Stato Stato S   (Italy)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRON BEAMS; ELECTRON SOURCES; ELECTROPLATING; GOLD PLATING; MASKS; MICROELECTRONIC PROCESSING; RANDOM ACCESS STORAGE; SINGLE CRYSTALS;

ABSORBER METALLIZATION PROCESS; CRITICAL DIMENSION CONTROL; ELECTRON BEAM PATTERNING; SYNCHROTRON RADIATION LITHOGRAPHY; X RAY MASK FABRICATION;

ELECTRON BEAM LITHOGRAPHY;

EID: 0029771233     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00225-1     Document Type: Article

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