Characterization of GaInAs/InP triple-barrier resonant tunneling diodes grown by organo-metallic vapor phase epitaxy for high-temperature estimation of phase coherent length of electrons

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1846-1848

  Takemura, Riichiro ^a   Suhara, Michihiko ^a   Oobo, Takashi ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Electron wave; GaInAs InP; OMVPE; Phase coherent length; Triple barrier resonant tunneling diode

Indexed keywords

EID: 0037604957     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1846     Document Type: Article

References (10)

1. K. Furuya: J. Appl. Phys. 62 (1987) 1492.
2. M. Tsuchiya and H. Sakaki: Jpn. J. Appl. Phys. 30 (1991) 1164.
3. H. Fukuyama, T. Waho and T. Mizutani: Jpn. J. Appl. Phys. 31 (1992) 823.
4. Y. C. Kang, M. Suhara, K. Furuya and R. Koizumi: Jpn. J. Appl. Phys. 34 (1995) 4417.
5. M. Suhara, R. Takemura and K. Furuya: Jpn. J. Appl. Phys. 34 (1995) 4452.
6. R. Takemura, M. Suhara, Y. Miyamoto, K. Furuya and Y. Nakamura: to be published in IEICE Trans.
7. T. Nakagawa, T. Fujita, Y. Matsumoto, T. Kojima and K. Ohta: Appl. Phys. Lett. 51 (1987) 445.
8. H. Asahi, M. Tewordt, R. T. Syme, M. J. Kelly, V. J. Law, J. E. F. Frost, D. A. Ritchie, G. A. C. Jones and M. Pepper: Surf. Sci. 267 (1992) 388.
9. K. Nomoto, T. Suzuki, K. Taira and I. Hase: Jpn. J. Appl. Phys. 33 (1994) 1142.
10. M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya and R. Takemura: to be submitted to J. Cryst. Growth.