Proceedings of the 1996 Topical Workshop on Heterostructure of Microelectronics

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1389-1686

[No Author Info available]

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED OPTOELECTRONICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

DISORDER INDUCED GAP STATE (DIGS); EIREV; FOLDED METAL INTERCONNECTION TECHNOLOGY (FMIT); N CHANNEL FIELD EFFECT TRANSISTORS (NFET); P CHANNEL FIELD EFFECT TRANSISTORS (PFET); PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT); REGENERATION CIRCUITS; SINGLE CHANNEL MONOLITHIC PHOTORECEIVERS; TWO DIMENSIONAL ELECTRON GASES (2DEG); VARIABLE GAIN AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031247465     PISSN: 00381101     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/S0038-1101(97)00081-6     Document Type: Conference Review

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