Preparation of heavily N-type ZnSe doped by iodine in remote plasma enhanced metal organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6302-6303

  Noda, Daiji ^a   Aoki, Toru ^a   Nakanishi, Yoichiro ^a   Hatanaka, Yoshinori ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Iodine doped ZnSe; MOCVD; N butyliodide; Plasma enhanced MOCVD; ZnSe

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; FILM PREPARATION; IODINE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

REMOTE PLASMA ENHANCED METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0031246454     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6302     Document Type: Article

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