Intervalence band absorption in bulk InSb lasers

IEE Proceedings: Optoelectronics

Volumn 144, Issue 5, 1997, Pages 299-304

  Carroll, M ^a,b   Blood, P ^a   Ashley, T ^a   Eiiiott, C T ^a  

^a UNIVERSITY OF WALES   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

High temperature IR laser

Indexed keywords

ABSORPTION SPECTROSCOPY; CARRIER CONCENTRATION; ENERGY GAP; INFRARED DEVICES; PERTURBATION TECHNIQUES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

HIGH TEMPERATURE INFRARED LASERS; INTERVALENCE BAND ABSORPTION (IVA);

SEMICONDUCTOR LASERS;

EID: 0031245678     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:19971313     Document Type: Article

References (16)

1. xSb/InSb heterostructure diode lasers', Appl. Phys. Lett., 1997, 70, (8), pp. 931-933
2. WHITE, A. M. : (Private communication)
3. KURNICK, S. W., and POWELL, J. M. : 'Optical absorption in pure single crystal InSb at 298 K and 78 K', Phys. Rev. . 1959, 116, (10), pp. 597-604
4. KANE, E. O. : 'Band structure of InSb', J. Phys. Chem. Solids, 1957, 1, pp. 249-260
5. LOWDIN, P. O. : 'A note on quantum mechanical perturbation theory', J. Chem. Phys., 1951, 19, pp. 1396-1401
6. BEATTIE, A. R., SCHAROCH, P., and ABRAM, R. A. : 'Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors', Semicond. Sci. Techno!., 1989, 4, pp. 715-723
7. CHELOKOWSKY, J. R., and COHEN, M. L. : 'Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors', Pliys. Rev. B, 1976, 14, (2), pp. 556-582
8. EHRENREICH, H. : ' Electron scattering in InSb', J. Phys. Client. Solids, 1957, 2, pp. 131-148
9. GOBELI, G. W., and FAN, H. Y. : 'Infrared absorption and valence band in indium antimonide', Phys. Rer., 1960, 119, (2), pp. 613-520
10. SCHAROCH, P., and ABRAM, R. A. : 'Overlap integrals for Auger processes', Semicond. Sci. Teclmol., 1988, 3, pp. 973-978
11. REES, P., and BLOOD, P. : 'Implementation of spectral broadening by carrier-carrier scattering in quantum well gain-current calculations', Semiconductor Science & Technology, 1995, 10, pp. 1545-1554
12. CHILDS, G. N., BRAND, S., and ABRAM, R. A. : 'Intervalence band absorption in semiconductor laser materials', Semicond. Sci. Teclmol. 1986, 1, pp. 116-1120
13. KANE, E. O. : 'Energy band structure in p-type germanium and silicon', J. Phys. Chem. Solids, 1956, 1, pp. 82-98
14. ZIMMERMANN, R. : ' Nonlinear optics and the Mott transition in semiconductors', Phys. Status Solidi B, 1988, 146, pp. 371-384
15. PASKOV, P. P., and PAVLOV, L. I. : 'Calculation of the carrier induced refractive index change in InSb', Appl. Phys. B, 1992, 54, pp. 113-118
16. BANYAI, L., and KOCH, SAV. : 'A simple theory for the effects of plasma screening in the optical spectra of highly excited semiconductors', Z. Phys. B, 1986, 63, pp. 283-291